Micron is now producing its first LPDDR4X memory devices using its second-generation 10nm-class process technology. “The new memory devices offer standard LPDDR4X data transfer rates of up to 4.266 Gbps per pin and consumes less power than earlier LPDDR4 chips,” reports AnandTech. From the report: Micron’s LPDDR4X devices are made using the company’s 1Y-nm fabrication tech and feature a 12 Gb capacity. The manufacturer says that its LPDDR4X memory chips consume 10% less power when compared to its LPDDR4-4266 products; this is because they feature a lower output driver voltage (I/O VDDQ), which the LPDDR4X standard reduces by 45%, from 1.1 V to 0.6 V. Micron’s 12 Gb (1.5 GB) LPDDR4X devices feature a slightly lower capacity than competing 16 Gb (2 GB) LPDDR4X offerings, but they are also cheaper to manufacture. As a result, Micron can offer lower-cost quad-die 64-bit LPDDR4X-4266 packages with a 48 Gb (6 GB) capacity and a 34.1 GB/s bandwidth than some of its competitors.

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