Samsung today said it’s started mass producing 512GB mobile-focused flash memory with over twice the read speed and 1.5 times the write speed of the previous leader, the 1TB module announced last month at CES. From a report: The V-NAND (PDF) memory is based on its embedded Universal Flash Storage (eUFS) 3.0 spec — the 1TB is eUFS 2.1. Samsung says the 512GB memory can hit read speeds up to 2,100 megabytes per second compared with 1,000MB/sec of the 1TB flash; sequential write can hit 410MB/sec versus 260MB/sec. The eUFS 3.0 1TB memory is slated to arrive in the second half of 2019.
of this story at Slashdot.
Source:: Slashdot